(China (Mainland))
Product Summary
The SST39VF080-70-4C-EIE is an 8 Mbit Multi-Purpose Flash. It is manufactured with SST’s proprietary, high-performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF080-70-4C-EIE writes (Program or Erase) with a 2.7-3.6V power supply. The SST39VF080-70-4C-EIE conforms to JEDEC standard pinouts for x8 memories.
Parametrics
SST39VF080-70-4C-EIE absolute maximum ratings: (1)Temperature Under Bias: -55℃ to +125℃; (2)Storage Temperature: -65℃ to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -2.0V to VDD+2.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (TA = 25℃): 1.0W; (7)Surface Mount Solder Reflow Temperature: 240℃ for 10 seconds; (8)Output Short Circuit Current: 50 mA.
Features
SST39VF080-70-4C-EIE features: (1)Organized as 1M x8; (2)Single Voltage Read and Write Operations; (3)Superior Reliability; (4)Low Power Consumption(typical values at 14 MHz); (5)Sector-Erase Capability; (6)Block-Erase Capability; (7)Latched Address and Data; (8)Automatic Write Timing; (9)End-of-Write Detection; (10)CMOS I/O Compatibility; (11)JEDEC Standard.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SST39VF080-70-4C-EIE |
Microchip Technology |
Flash 1M X 8 70ns |
Data Sheet |
Negotiable |
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Negotiable |
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