(China (Mainland))
Product Summary
The K9F3208WOA-TCBO is a 4M x 8 Bit NAND Flash Memory with a spare 128K (131,072) x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 528-byte page in typical 250μs and an erase operation can be performed in typical 2ms on an 8K-byte block. The K9F3208WOA-TCBO is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.
Parametrics
K9F3208WOA-TCBO absolute maximum ratings: (1)Voltage on any pin relative to VSS VIN: -0.6V to +7.0V; (2)Temperature Under Bias TBIAS: -10℃ to +125℃; (3)Storage Temperature TSTG: -65℃ to +150℃; (4)Supply Voltage VCC: 2.7V to -5.5V.
Features
K9F3208WOA-TCBO features: (1)Voltage Supply: 2.7V to 5.5V; (2)Organization: Memory Cell Array: (4M + 128K)bit x 8bit, Data Register: (512 + 16)bit x8bit; (3)Automatic Program and Erase: Page Program: (512+16)Byte, Block Erase: (8K +256)Byte, Status Register; (4)528-Byte Page Read Operation: Random Access: 10ms(Max.), Serial Page Access: 50ns(Min.); (5)Fast Write Cycle Time: Program Time: 250ms(Typ.), Block Erase Time: 2ms(Typ.); (6)Command/Address/Data Multiplexed I/O port; (7)Hardware Data Protection: Program/Erase Lockout During Power Transitions; (8)Reliable CMOS Floating-Gate Technology: Endurance: 1Million Program/Erase Cycles, Data Retention: 10 years; (9)Command Register Operation; (10)44(40) - Lead TSOP Type II (400mil/0.8mm pitch), Forward Type.
Diagrams
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 K9F3208W0A-TIB0 |
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Data Sheet |
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K9F3208W0A-TCB0 |
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Data Sheet |
Negotiable |
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